Material Deposition Chart

Key of Symbols

✝ Magnetic material (requires special sputter source)

‡ One run only

* Influenced by composition

** The z-ratio is unknown. Therefore, we recommend using 1.00 or an experimentally determined value. Please click here for instructions on how to determine this value.

*** All metals alumina coated

C = carbon

Gr = graphite

Q = quartz

Incl = Inconel^®

VitC = vitreous carbon

SS = stainless steel

Ex = excellent

G = good

F = fair

P = poor

S = sublimes

D = decomposes

PDC = Pulsed DC sputtering

RF = RF sputtering is effective

RF-R = reactive RF sputter is effective

DC = DC sputtering is effective

DC-R = reactive DC sputtering is effective

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Initial letter of the deposition material.

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Material	Symbol	MP (°C)	S/D	g/cm³	Z Ratio	Temp.(°C) for Given Vap. Press. (Torr)			E-Beam Evaporation		Thermal Evaporation				Sputter	Comments
Material	Symbol	MP (°C)	S/D	g/cm³	Z Ratio	10^-8	10^-6	10^-4	E-Beam Performance	Liner Material	Boat	Coil	Basket	Crucible	Sputter	Comments
Material	Symbol	MP (°C)	S/D	g/cm³	Z Ratio	10^-8	10^-6	10^-4	E-Beam Performance	Liner Material	Boat	Coil	Basket	Crucible	Sputter	Comments
Material	Symbol	MP (°C)	S/D	g/cm³	Z Ratio	Temp.(°C) for Given Vap. Press. (Torr)			E-Beam Evaporation		Thermal Evaporation				Sputter	Comments
Aluminum	Al	660	-	2.7	1.08	677	821	1,010	Excellent	FABMATE^®, Intermetallic	-	-	W	TiB₂-BN, BN	DC	Click here for full Evaporation Process Notes on this material. Alloys W/Mo/Ta. Flash evap or use BN crucible.
Aluminum Antimonide	AlSb	1,080	-	4.3	-	-	-	-	-	-	-	-	-	-	RF	-
Aluminum Arsenide	AlAs	1,600	-	3.7	-	-	-	~1,300	-	-	-	-	-	-	RF	-
Aluminum Bromide	AlBr₃	97	-	2.64	-	-	-	~50	-	-	Mo	-	-	Gr	-	-
Aluminum Carbide	Al₄C₃	~1,400	D	2.36	-	-	-	~800	Fair	-	-	-	-	-	RF	-
Aluminum Fluoride	AlF₃	1,291	S	2.36	-	410	490	700	Poor	Graphite, FABMATE^®	Mo, W, Ta	-	-	Gr	RF	-
Aluminum Nitride	AlN	>2,200	S	3.26	**1.00	-	-	~1,750	Fair	-	-	-	-	-	RF-R	Decomposes. Reactive evap in 10^-3 T N₂ with glow discharge.
Aluminum Oxide	Al₂O₃	2,072	-	3.97	0.336	-	-	1,550	Excellent	FABMATE^®, Tungsten	W	-	W	-	RF-R	Click here for full Evaporation Process Notes on this material. Sapphire excellent in E-beam; forms smooth, hard films.
Aluminum Phosphide	AlP	2,000	-	2.42	-	-	-	-	-	-	-	-	-	-	RF	-
Aluminum, 1% Copper	Al/Cu 99/1 wt%	640	-	2.82	**1.00	-	-	-	-	-	-	-	-	-	DC	Wire feed & flash. Difficult from dual sources.
Aluminum, 1% Silicon	Al/Si 99/1 wt %	640	-	2.69	**1.00	-	-	1,010	-	-	-	-	-	TiB₂-BN	RF, DC	Wire feed & flash. Difficult from dual sources.
Antimony	Sb	630	S	6.68	0.768	279	345	425	Poor	-	Mo* Ta*	Mo, Ta	Mo, Ta	BN, C, Al₂O₃	RF, DC	Evaporates well.
Antimony Oxide	Sb₂O₃	656	S	5.2	-	-	-	~300	Good	-	-	-	-	BN, Al₂O₃	RF-R	Decomposes on W.
Antimony Selenide	Sb₂Se₃	611	-	-	-	-	-	-	-	-	Ta	-	-	C	RF	Stoichiometry variable.
Antimony Sulfide	Sb₂S₃	550	-	4.64	-	-	-	~200	Good	Molybdenum, Tantalum	Mo, Ta	-	Mo, Ta	Al₂O₃	-	No decomposition.
Antimony Telluride	Sb₂Te₃	629	-	6.5	**1.00	-	-	600	-	-	-	-	-	C	RF	Decomposes over 750°C.
Arsenic	As	817	S	5.73	-	107	150	210	Poor	FABMATE^®	C	-	-	Al₂O₃	-	Sublimes rapidly at low temp. Not recommended for sputtering.
Arsenic Oxide	As₂O₃	312	-	3.74	-	-	-	-	-	-	-	-	-	-	-	-
Arsenic Selenide	As₂Se₃	~360	-	4.75	-	-	-	-	-	-	-	-	-	Al₂O₃, Q	RF	-
Arsenic Sulfide	As₂S₃	300	-	3.43	-	-	-	~400	Fair	-	Mo	-	-	Al₂O₃, Q	RF	-
Arsenic Telluride	As₂Te₃	362	-	6.5	-	-	-	-	-	-	Flash	-	-	-	-	See JVST. 1973, 10:748
Barium	Ba	725	-	3.51	2.1	545	627	735	Fair	-	W, Ta, Mo	W	W	Metals	RF	Wets without alloying, reacts with ceramics. Not recommended for sputtering.
Barium Chloride	BaCl₂	963	-	3.92	-	-	-	~650	-	-	Ta, Mo	-	-	-	RF	Preheat gently to outgas.
Barium Fluoride	BaF₂	1,355	S	4.89	0.793	-	-	~700	Good	Molybdenum	Mo	-	-	-	RF	-
Barium Oxide	BaO	1,918	-	5.72	-	-	-	~1,300	Poor	-	-	-	-	Al₂O₃	RF, RF-R	Decomposes slightly.
Barium Sulfide	BaS	1,200	-	4.25	-	-	-	1,100	-	-	Mo	-	-	-	RF	-
Barium Titanate	BaTiO₃	1,625	D	6.02	0.464	-	-	-	-	-	-	-	-	-	RF	Gives Ba. Co-evap and Sputter OK.
Beryllium	Be	1,278	-	1.85	-	710	878	1,000	Excellent	Graphite, FABMATE^®	W, Ta	W	W	C	DC	Wets W/Mo/Ta. Evaporates easily
Beryllium Carbide	Be₂C	>2,100	D	1.9	-	-	-	-	-	-	-	-	-	-	-	-
Beryllium Chloride	BeCl₂	405	-	1.9	-	-	-	~150	-	-	-	-	-	-	RF	-
Beryllium Fluoride	BeF₂	800	S	1.99	-	-	-	~200	Good	-	-	-	-	-	-	-
Beryllium Oxide	BeO	2,530	-	3.01	-	-	-	1,900	Good	-	-	-	W	-	RF, RF-R	No decomposition from E-beam guns.
Bismuth	Bi	271	-	9.8	0.79	330	410	520	Excellent	FABMATE^®, Graphite	W, Mo, Ta	W	W	Al₂O₃	DC	Resistivity high. Low Melting Point materials not ideal for sputtering.
Bismuth Fluoride	BiF₃	727	S	5.32	-	-	-	~300	-	-	-	-	-	Gr	RF	-
Bismuth Oxide	Bi₂O₃	860	-	8.55	**1.00	-	-	~1,400	Poor	-	-	-	-	-	RF, RF-R	-
Bismuth Selenide	Bi₂Se₃	710	D	6.82	**1.00	-	-	~650	Good	-	-	-	-	Gr, Q	RF	Co-evap from 2 sources or sputter.
Bismuth Sulfide	Bi₂S₃	685	D	7.39	-	-	-	-	-	-	-	-	-	-	RF	-
Bismuth Telluride	Bi₂Te₃	573	-	7.7	**1.00	-	-	~600	-	-	W, Mo	-	-	Gr, Q	RF	Co-evap from 2 sources or sputter.
Bismuth Titanate	Bi₂Ti₂O₇	870	D	-	-	-	-	-	-	-	-	-	-	-	RF	Sputter or co-evap from 2 sources in 10^-2 Torr O₂.
Boron	B	2,079	-	2.34	0.389	1,278	1,548	1,797	Excellent	FABMATE^®, Graphite	C	-	-	C	RF	Explodes with rapid cooling. Forms carbide with container.
Boron Carbide	B₄C	2,350	-	2.52	**1.00	2,500	2,580	2,650	Excellent	FABMATE^®, Graphite	-	-	-	-	RF	Similar to chromium.
Boron Nitride	BN	~3,000	S	2.25	-	-	-	~1,600	Poor	-	-	-	-	-	RF, RF-R	Decomposes when sputtered. Reactive preferred.
Boron Oxide	B₂O₃	~450	-	1.81	-	-	-	~1,400	Good	Molybdenum	Mo	-	-	-	-	-
Boron Sulfide	B₂S₃	310	-	1.55	-	-	-	800	-	-	-	-	-	Gr	RF	-
Cadmium	Cd	321	-	8.64	0.682	64	120	180	Poor	-	W, Mo, Ta	-	W, Mo, Ta	Al₂O₃, Q	DC, RF	Bad for vacuum systems. Low sticking coefficient.
Cadmium Antimonide	Cd₃Sb₂	456	-	6.92	-	-	-	-	-	-	-	-	-	-	-	-
Cadmium Arsenide	Cd₃As₂	721	-	6.21	-	-	-	-	-	-	-	-	-	Q	RF	-
Cadmium Bromide	CdBr₂	567	-	5.19	-	-	-	~300	-	-	-	-	-	-	-	-
Cadmium Chloride	CdCl₂	568	-	4.05	-	-	-	~400	-	-	-	-	-	-	-	-
Cadmium Fluoride	CdF₂	1,100	-	6.64	-	-	-	~500	-	-	-	-	-	-	RF	-
Cadmium Iodide	CdI₂	387	-	5.67	-	-	-	~250	-	-	-	-	-	-	-	-
Cadmium Oxide	CdO	>1,500	D	6.95	-	-	-	~530	-	-	-	-	-	-	RF-R	Disproportionates.
Cadmium Selenide	CdSe	>1,350	S	5.81	**1.00	-	-	540	Good	Molybdenum, Tantalum	Mo, Ta	-	-	Al₂O₃, Q	RF	Evaporates easily.
Cadmium Sulfide	CdS	1,750	S	4.82	1.02	-	-	550	Fair	-	W, Mo, Ta	-	W	Al₂O₃, Q	RF	Sticking coefficient affected by substrate.
Cadmium Telluride	CdTe	1,092	-	5.85	0.98	-	-	450	-	-	W, Mo, Ta	W	W, Ta, Mo	-	RF	Stoichiometry depends on substrate temp. n~2.6.
Calcium	Ca	839	S	1.54	2.62	272	357	459	Poor	-	W	W	W	Al₂O₃, Q	-	Click here for full Evaporation Process Notes on this material. Corrodes in air.
Calcium Fluoride	CaF₂	1,423	-	3.18	0.775	-	-	~1,100	-	-	W, Mo, Ta	W, Mo, Ta	W, Mo, Ta	Q	RF	Rate control important. Preheat gently to outgas.
Calcium Oxide	CaO	2,614	-	3.3	-	-	-	~1,700	-	-	W, Mo	-	-	ZrO₂	RF-R	Forms volatile oxides with W/Mo.
Calcium Silicate	CaSiO₃	1,540	-	2.91	-	-	-	-	Good	-	-	-	-	Q	RF	-
Calcium Sulfide	CaS	2,525	D	2.5	-	-	-	1,100	-	-	Mo	-	-	-	RF	Decomposes.
Calcium Titanate	CaTiO₃	1,975	-	4.1	-	1,490	1,600	1,690	Poor	-	-	-	-	-	RF	Disproportionates except in sputtering.
Calcium Tungstate	CaWO₄	1,200	-	6.06	-	-	-	-	Good	-	W	-	-	-	RF	-
Carbon	C	~3,652	S	2.25	3.26	1,657	1,867	2,137	Excellent	FABMATE^®, Graphite	-	-	-	-	PDC	E-beam preferred. Arc evaporation. Poor film adhesion.
Cerium	Ce	798	-	6.70	**1.00	970	1,150	1,380	Good	-	W, Ta	W	W, Ta	Al₂O₃	DC, RF	-
Cerium (III) Oxide	Ce₂O₃	1,692	-	6.86	-	-	-	-	Fair	-	W	-	-	-	-	Alloys with source. Use 0.015"–0.020" W boat.
Cerium (IV) Oxide	CeO₂	~2,600	-	7.13	**1.00	1,890	2,000	2,310	Good	Tantalum, Graphite, FABMATE^®	W	-	-	-	RF, RF-R	Click here for full Evaporation Process Notes on this material. Very little decomposition.
Cerium Fluoride	CeF₃	1,460	-	6.16	**1.00	-	-	~900	Good	Tungsten, Tantalum, Molybdenum	W, Mo, Ta	-	Mo, Ta	-	RF	Preheat gently to outgas. n~1.7.
Cesium	Cs	28	-	1.88	-	-16	22	80	-	-	-	-	-	Q	-	-
Cesium Bromide	CsBr	636	-	3.04	-	-	-	~400	-	-	W	-	-	-	RF	-
Cesium Chloride	CsCl	645	-	3.99	-	-	-	~500	-	-	W	-	-	-	RF	-
Cesium Fluoride	CsF	682	-	4.12	-	-	-	~500	-	-	W	-	-	-	RF	-
Cesium Hydroxide	CsOH	272	-	3.68	-	-	-	550	-	-	-	-	-	-	-	-
Cesium Iodide	CsI	626	-	4.51	-	-	-	~500	-	-	W	-	-	Q	RF	-
Chiolite	Na₅Al₃F₁₄	735	-	2.9	-	-	-	~800	-	-	Mo, W	-	-	-	RF	-
Chromium	Cr	1,857	S	7.2	0.305	837	977	1,157	Good	FABMATE^®, Graphite, Tungsten	Cr Plated W Rods	W	W	VitC	DC	Click here for full Evaporation Process Notes on this material. Films very adherent. High rates possible.
Chromium Boride	CrB	1,950-2,050	-	6.17	-	-	-	-	-	-	-	-	-	-	RF	-
Chromium (II) Bromide	CrBr₂	842	-	4.36	-	-	-	550	-	-	-	-	-	-	RF	-
Chromium Carbide	Cr₃C₂	1,895	-	6.68	-	-	-	~2,000	Fair	-	W	-	-	-	RF	-
Chromium Chloride	CrCl₂	824	-	2.88	-	-	-	550	-	-	Fe	-	-	-	RF	-
Chromium Oxide	Cr₂O₃	2,266	-	5.21	**1.00	-	-	~2,000	Good	-	W, Mo	-	W	-	RF, RF-R	Disproportionates to lower oxides; reoxidizes at 600°C in air.
Chromium Silicide	CrSi₂	1,490	-	5.5	-	-	-	-	-	-	-	-	-	-	RF	-
Chromium-Silicon Monoxide	Cr-SiO	-	S	*	-	*	*	*	Good	-	W	-	W	-	RF	Flash evaporate.
Cobalt †	Co	1,495	-	8.9	0.343	850	990	1,200	Excellent	Direct in Hearth	W, Nb	-	W	Al₂O₃	DC	Click here for full Evaporation Process Notes on this material. Alloys with W/Ta/Mo.
Cobalt Bromide	CoBr₂	678	D	4.91	-	-	-	400	-	-	-	-	-	-	RF	-
Cobalt Chloride	CoCl₂	724	D	3.36	-	-	-	472	-	-	-	-	-	-	RF	-
Cobalt Oxide	CoO	1,795	-	6.45	0.412	-	-	-	-	-	-	-	-	-	DC-R, RF-R	Sputtering preferred.
Copper	Cu	1,083	-	8.92	0.437	727	857	1,017	Excellent	Graphite, Molybdenum	Mo, W	W	W	Al₂O₃, Mo, Ta	DC	Click here for full Evaporation Process Notes on this material. Adhesion poor. Use interlayer (Cr). Evaporates using any source material.
Copper Chloride	CuCl	430	-	4.14	-	-	-	~600	-	-	-	-	-	-	RF	-
Copper Oxide	Cu₂O	1,235	S	6	**1.00	-	-	~600	Good	Graphite, FABMATE^®, Tantalum	Ta	-	-	Al₂O₃	DC-R, RF-R	-
Copper Sulfide	Cu₂S	1,100	-	5.6	-	-	-	-	-	-	-	-	-	-	-	-
Cryolite	Na₃AlF₆	1,000	-	2.9	-	1,020	1,260	1,480	Excellent	FABMATE^®, Tungsten	W, Mo, Ta	-	W, Mo, Ta	VitC	RF	Large chunks reduce spitting. Little decomposition.
Dysprosium	Dy	1,412	-	8.55	0.6	625	750	900	Good	Direct in Hearth	Ta	-	-	-	DC	-
Dysprosium Fluoride	DyF₃	1,360	S	-	-	-	-	~800	Good	-	Ta	-	-	-	RF	-
Dysprosium Oxide	Dy₂O₃	2,340	-	7.81	-	-	-	~1,400	-	-	-	-	-	-	RF, RF-R	Loses oxygen.
Erbium	Er	1,529	S	9.07	0.74	650	775	930	Good	Tungsten, Tantalum	W, Ta	-	-	-	DC	-
Erbium Fluoride	ErF₃	1,350	-	7.82	-	-	-	~750	-	-	Mo	-	-	-	RF	See JVST. 1985; A3(6):2320.
Erbium Oxide	Er₂O₃	2,350	-	8.64	**1.00	-	-	~1,600	-	-	-	-	-	-	RF, RF-R	Loses oxygen.
Europium	Eu	822	S	5.24	**1.00	280	360	480	Fair	-	W, Ta	-	-	Al₂O₃	DC	Low Ta solubility.
Europium Fluoride	EuF₂	1,380	-	6.5	-	-	-	~950	-	-	Mo	-	-	-	RF	-
Europium Oxide	Eu₂O₃	2,350	-	7.42	-	-	-	~1,600	Good	-	Ta, W	-	-	ThO₂	RF, RF-R	Loses oxygen. Films clear and hard.
Europium Sulfide	EuS	-	-	5.75	-	-	-	-	Good	-	-	-	-	-	RF	-
Gadolinium †	Gd	1,313	-	7.9	0.67	760	900	1,175	Excellent	Direct in Hearth	Ta	-	-	Al₂O₃	DC	High Ta solubility
Gadolinium Carbide	GdC₂	-	-	-	-	-	-	1,500	-	-	-	-	-	C	RF	Decomposes under sputtering.
Gadolinium Oxide	Gd₂O₃	2,330	-	7.41	-	-	-	-	Fair	-	-	-	-	-	RF, RF-R	Loses oxygen.
Gallium	Ga	30	-	5.9	-	619	742	907	Good	FABMATE^®	-	-	-	Al₂O₃, Q	-	Alloys with W/Ta/Mo. Use E-beam gun. Low Melting Point materials not ideal for sputtering.
Gallium Antimonide	GaSb	710	-	5.6	-	-	-	-	Fair	-	W, Ta	-	-	-	RF	Flash evaporate.
Gallium Arsenide	GaAs	1,238	-	5.3	-	-	-	-	Good	Graphite, FABMATE^®	W, Ta	-	-	C	RF	Flash evaporate.
Gallium Nitride	GaN	800	S	6.1	-	-	-	~200	-	-	-	-	-	Al₂O₃	RF, RF-R	Evaporate Ga in 10^-3 Torr N₂.
Gallium Oxide	Ga₂O₃	1,900	-	6.44	-	-	-	-	-	-	W	-	-	-	RF	Loses oxygen.
Gallium Phosphide	GaP	1,540	-	4.1	-	-	770	920	-	-	W, Ta	-	W	Q	RF	Does not decompose. Rate control important.
Germanium	Ge (N-type)	937	-	5.32	0.516	812	957	1,167	Excellent	FABMATE^®, Graphite	W, C, Ta	-	-	Q, Al₂O₃	DC	Click here for full Evaporation Process Notes on this material. Excellent films from E-beam.
Germanium (II) Oxide	GeO	700	S	-	-	-	-	500	-	-	-	-	-	Q	RF	-
Germanium (III) Oxide	GeO₂	1,086	-	6.24	-	-	-	~625	Good	FABMATE^®, Tantalum, Molybdenum	Ta, Mo	-	W, Mo	Q, Al₂O₃	RF-R	Similar to SiO; film predominantly GeO.
Germanium Nitride	Ge₃N₂	450	S	5.2	-	-	-	~650	-	-	-	-	-	-	RF-R	Sputtering preferred.
Germanium Telluride	GeTe	725	-	6.2	-	-	-	381	-	-	W, Mo	-	W	Q, Al₂O₃	RF	-
Glass, Schott^® 8329	—	1,300	-	2.2	-	-	-	-	Excellent	-	-	-	-	-	RF	Evaporable alkali glass. Melt in air before evaporating.
Gold	Au	1,064	-	19.32	0.381	807	947	1,132	Excellent	FABMATE^®, Molybdenum	W* Mo*	-	-	Al₂O₃, BN	DC	Click here for full Evaporation Process Notes on this material. Films soft; not very adherent.
Hafnium	Hf	2,227	-	13.31	0.36	2,160	2,250	3,090	Good	-	-	-	-	-	DC	-
Hafnium Boride	HfB₂	3,250	-	10.5	-	-	-	-	-	-	-	-	-	-	DC, RF	-
Hafnium Carbide	HfC	~3,890	S	12.2	**1.00	-	-	~2,600	-	-	-	-	-	-	RF	-
Hafnium Nitride	HfN	3,305	-	13.8	**1.00	-	-	-	-	-	-	-	-	-	RF, RF-R	-
Hafnium Oxide	HfO₂	2,758	-	9.68	**1.00	-	-	~2,500	Fair	Direct in Hearth	-	-	-	-	RF, RF-R	Click here for full Evaporation Process Notes on this material. Film HfO.
Hafnium Silicide	HfSi₂	1,750	-	7.2	-	-	-	-	-	-	-	-	-	-	RF	-
Holmium	Ho	1,474	-	8.8	0.58	650	770	950	Good	-	W, Ta	W	W	-	-	-
Holmium Fluoride	HoF₃	1,143	-	7.68	-	-	-	~800	-	-	-	-	-	Q	DC, RF	-
Holmium Oxide	Ho₂O₃	2,370	-	8.41	-	-	-	-	-	-	-	-	-	-	RF, RF-R	Loses oxygen.
Inconel^®	Ni/Cr/Fe	1,425	-	8.5	-	-	-	-	Good	FABMATE^®, Tungsten	W	W	W	-	DC	Use fine wire wrapped on W. Low rate required for smooth films.
Indium	In	157	-	7.3	0.841	487	597	742	Excellent	FABMATE^®, Graphite, Molybdenum	W, Mo	-	W	Gr, Al₂O₃	DC	Click here for full Evaporation Process Notes on this material. Wets W and Cu. Use Mo liner. Low Melting Point materials not ideal for sputtering.
Indium (I) Oxide	In₂O	~600	S	6.99	-	-	-	650	-	-	-	-	-	-	RF	Decomposes under sputtering.
Indium (III) Oxide	In₂O₃	850	-	7.18	**1.00	-	-	~1,200	Good	-	W, Pt	-	-	Al₂O₃	-	-
Indium (I) Sulfide	In₂S	653	-	5.87	-	-	-	650	-	-	-	-	-	Gr	RF	-
Indium (II) Sulfide	InS	692	S	5.18	-	-	-	650	-	-	-	-	-	Gr	RF	-
Indium (III) Sulfide	In₂S₃	1,050	S	4.9	-	-	-	850	-	-	-	-	-	Gr	RF	Film In₂S.
Indium (II) Telluride	InTe	696	-	6.29	-	-	-	-	-	-	-	-	-	-	-	-
Indium (III) Telluride	In₂Te₃	667	-	5.78	-	-	-	-	-	-	-	-	-	-	RF	Sputtering preferred; or co-evaporate from 2 sources; flash.
Indium Antimonide	InSb	535	-	5.8	-	-	-	-	-	-	W	-	-	-	RF	Decomposes. Sputtering preferred; or co-evaporate.
Indium Arsenide	InAs	943	-	5.7	-	780	870	970	-	-	W	-	-	-	RF	-
Indium Nitride	InN	1,200	-	7	-	-	-	-	-	-	-	-	-	-	-	-
Indium Phosphide	InP	1,070	-	4.8	-	-	630	730	-	-	W, Ta	-	W, Ta	Gr	RF	Deposits are P rich.
Indium Selenide	In₂Se₃	890	-	5.67	-	-	-	-	-	-	-	-	-	-	RF	Sputtering preferred; or co-evaporate from 2 sources; flash.
Indium Tin Oxide	In₂O₃/SnO₂ 90/10 wt %	1,800	S	7.14	-	-	-	-	-	FABMATE^®, Graphite	-	-	-	-	-	Click here for full Evaporation Process Notes on this material. -
Iridium	Ir	2,410	-	22.42	0.129	1,850	2,080	2,380	Fair	-	-	-	-	-	DC	Click here for full Evaporation Process Notes on this material. -
Iron †	Fe	1,535	-	7.86	0.349	858	998	1,180	Excellent	FABMATE^®‡	W	W	W	Al₂O₃	DC	Click here for full Evaporation Process Notes on this material. Attacks W. Films hard, smooth. Preheat gently to outgas.
Iron (II) Oxide	FeO	1,369	-	5.7	-	-	-	-	Poor	-	-	-	-	-	RF, RF-R	Decomposes; sputtering preferred.
Iron (III) Oxide	Fe₂O₃	1,565	-	5.24	**1.00	-	-	-	Good	-	W	-	W	-	-	Disproportionate to Fe₃O₄ at 1,530°C.
Iron Bromide	FeBr₂	684	D	4.64	-	-	-	561	-	-	-	-	-	Fe	RF	-
Iron Chloride	FeCl₂	670	S	3.16	-	-	-	300	-	-	-	-	-	Fe	RF	-
Iron Iodide	FeI₂	-	-	5.32	-	-	-	400	-	-	-	-	-	Fe	RF	-
Iron Sulfide	FeS	1,193	D	4.74	-	-	-	-	-	-	-	-	-	Al₂O₃	RF	Decomposes
Kanthal	FeCrAl	-	-	7.1	-	-	-	-	-	-	W	W	W	-	DC	-
Lanthanum	La	921	-	6.17	0.92	990	1,212	1,388	Excellent	Tungsten, Tantalum	W, Ta	-	-	Al₂O₃	RF	Films will burn in air if scraped.
Lanthanum Boride	LaB₆	2,210	D	4.72	**1.00	-	-	-	Good	-	-	-	-	-	RF	-
Lanthanum Bromide	LaBr₃	783	-	5.06	-	-	-	-	-	-	-	-	Ta	-	RF	Hygroscopic.
Lanthanum Fluoride	LaF₃	1,490	S	6.0	-	-	-	900	Good	Tantalum, Molybdenum	Ta, Mo	-	Ta	-	RF	No decomposition. n~1.6.
Lanthanum Oxide	La₂O₃	2,307	-	6.51	**1.00	-	-	1,400	Good	Graphite, FABMATE^®, Tungsten	W, Ta	-	-	-	RF	Loses oxygen. n~1.73.
Lead	Pb	328	-	11.34	1.13	342	427	497	Excellent	FABMATE^®	W, Mo	W	W, Ta	Al₂O₃, Q	DC	-
Lead Bromide	PbBr₂	373	-	6.66	-	-	-	~300	-	-	-	-	-	-	-	-
Lead Chloride	PbCl₂	501	-	5.85	-	-	-	~325	-	-	-	-	-	Al₂O₃	RF	Little decomposition.
Lead Fluoride	PbF₂	855	S	8.24	-	-	-	~400	-	-	W, Mo	-	-	BeO	RF	-
Lead Iodide	PbI₂	402	-	6.16	-	-	-	~500	-	-	-	-	-	Q	-	-
Lead Oxide	PbO	886	-	9.53	-	-	-	~550	-	-	-	-	-	Q, Al₂O₃	RF-R	No decomposition. n~2.6.
Lead Selenide	PbSe	1,065	S	8.1	-	-	-	~500	-	-	W, Mo	-	W	Gr, Al₂O₃	RF	-
Lead Stannate	PbSnO₃	1,115	-	8.1	-	670	780	905	Poor	-	-	-	-	Al₂O₃	RF	Disproportionates.
Lead Sulfide	PbS	1,114	S	7.5	-	-	-	500	-	-	W	-	W, Mo	Q, Al₂O₃	RF	Little decomposition.
Lead Telluride	PbTe	917	-	8.16	0.651	780	910	1,050	-	-	Mo, Pt, Ta	-	-	Al₂O₃, Gr	RF	Deposits are Te rich. Sputtering preferred.
Lead Titanate	PbTiO₃	-	-	7.52	1.16	-	-	-	-	-	Ta	-	-	-	RF	-
Lithium	Li	181	-	0.53	5.9	227	307	407	Good	Tantalum	Ta	-	-	Al₂O₃	-	Click here for full Evaporation Process Notes on this material. Metal reacts quickly in air.
Lithium Bromide	LiBr	550	-	3.46	-	-	-	~500	-	-	Ni	-	-	-	RF	-
Lithium Chloride	LiCl	605	-	2.07	-	-	-	400	-	-	Ni	-	-	-	RF	Preheat gently to outgas.
Lithium Fluoride	LiF	845	-	2.64	0.778	875	1,020	1,180	Good	Tantalum, Tungsten, Molybdenum	Ni, Ta, Mo, W	-	-	Al₂O₃	RF	Click here for full Evaporation Process Notes on this material. Rate control important for optical films. Preheat gently to outgas.
Lithium Iodide	LiI	449	-	4.08	-	-	-	400	-	-	Mo, W	-	-	-	RF	-
Lithium Niobate	LiNbO₃	-	-	4.7	0.463	-	-	-	-	-	-	-	-	-	-	-
Lithium Oxide	Li₂O	>1,700	-	2.01	-	-	-	850	-	-	-	-	-	-	RF	-
Lutetium	Lu	1,663	-	9.84	-	-	-	1,300	Excellent	Direct in Hearth	Ta	-	-	Al₂O₃	RF, DC	-
Lutetium Oxide	Lu₂O₃	-	-	9.42	-	-	-	1,400	-	-	-	-	-	-	RF	Decomposes.
Magnesium	Mg	649	S	1.74	1.61	185	247	327	Good	FABMATE^®, Graphite, Tungsten	W, Mo, Ta, Cb	W	W	Al₂O₃	DC	Click here for full Evaporation Process Notes on this material. Extremely high rates possible.
Magnesium Aluminate	MgAl₂O₄	2,135	-	3.6	-	-	-	-	Good	-	-	-	-	-	RF	Natural spinel.
Magnesium Bromide	MgBr₂	700	-	3.72	-	-	-	~450	-	-	Ni	-	-	-	RF	Decomposes.
Magnesium Chloride	MgCl₂	714	-	2.32	-	-	-	400	-	-	Ni	-	-	-	RF	Decomposes.
Magnesium Fluoride	MgF₂	1,261	-	3.15	0.637	-	-	1,000	Excellent	FABMATE^®, Graphite, Molybdenum	Mo, Ta	-	-	Al₂O₃	RF	Click here for full Evaporation Process Notes on this material. Substrate temp and rate control important. Reacts with W. Mo OK.
Magnesium Iodide	MgI₂	<637	D	4.43	-	-	-	200	-	-	-	-	-	-	RF	-
Magnesium Oxide	MgO	2,852	-	3.58	0.411	-	-	1,300	Good	FABMATE^®, Graphite	-	-	-	C, Al₂O₃	RF, RF-R	Evaporates in 10^-3 Torr O₂ for stoichiometry.
Manganese	Mn	1,244	S	7.2	0.377	507	572	647	Good	Tungsten	W, Ta, Mo	W	W	Al₂O₃	DC	-
Manganese (II) Oxide	MnO	1945	-	5.37	-	-	-	-	-	-	-	-	-	-	-	-
Manganese (III) Oxide	Mn₂O₃	1,080	-	4.5	0.467	-	-	-	-	-	-	-	-	-	-	-
Manganese (IV) Oxide	MnO₂	535	-	5.03	-	-	-	-	Poor	-	W	-	W	-	RF-R	Loses oxygen at 535°C.
Manganese Bromide	MnBr₂	-	D	4.39	-	-	-	500	-	-	-	-	-	-	RF	-
Manganese Chloride	MnCl₂	650	-	2.98	-	-	-	450	-	-	-	-	-	-	RF	-
Manganese Sulfide	MnS	-	D	3.99	-	-	-	1,300	-	-	Mo	-	-	-	RF	Decomposes.
Mercury	Hg	-39	-	13.55	-	-68	-42	-6	-	-	-	-	-	-	-	-
Mercury Sulfide	HgS	584	S	8.1	-	-	-	250	-	-	-	-	-	Al₂O₃	RF	Decomposes.
Molybdenum	Mo	2,617	-	10.2	0.257	1,592	1,822	2,117	Excellent	FABMATE^®, Graphite	-	-	-	-	DC	Click here for full Evaporation Process Notes on this material. Films smooth, hard.
Molybdenum Boride	MoB₂	2,100	-	7.12	-	-	-	-	Poor	-	-	-	-	-	RF	-
Molybdenum Carbide	Mo₂C	2,687	-	8.9	**1.00	-	-	-	Fair	-	-	-	-	-	RF	Evaporation of Mo(CO)₆ yields Mo₂C.
Molybdenum Sulfide	MoS₂	1,185	-	4.8	**1.00	-	-	~50	-	-	-	-	-	-	RF	-
Molybdenum Oxide	MoO₃	795	S	4.69	**1.00	-	-	~900	-	-	Mo	-	Mo	Al₂O₃, BN	RF	Click here for full Evaporation Process Notes on this material. Slight oxygen loss.
Molybdenum Silicide	MoSi₂	2,050	-	6.31	**1.00	-	-	-	-	-	W	-	-	-	RF	Decomposes.
Neodymium	Nd	1,021	-	7.01	**1.00	731	871	1,062	Excellent	Tantalum	Ta	-	-	Al₂O₃	DC	Low W solubility.
Neodymium Fluoride	NdF₃	1,410	-	6.5	-	-	-	~900	Good	Tungsten, Molybdenum	Mo, W	-	Mo, Ta	Al₂O₃	RF	Very little decomposition.
Neodymium Oxide	Nd₂O₃	~1,900	-	7.24	-	-	-	~1,400	Good	Tantalum, Tungsten	Ta, W	-	-	ThO₂	RF, RF-R	Loses oxygen; films clear. E-beam preferred.
Nichrome IV^®	Ni/Cr	1,395	-	8.5	**1.00	847	987	1,217	Excellent	FABMATE^®	***	W	W, Ta	Al₂O₃	DC	Alloys with W/Ta/Mo.
Nickel †	Ni	1,453	-	8.91	0.331	927	1,072	1,262	Excellent	FABMATE^®‡,Copper	W***	-	-	Al₂O₃	DC	Click here for full Evaporation Process Notes on this material. Alloys with W/Ta/Mo. Smooth adherent films.
Nickel Bromide	NiBr₂	963	S	5.1	-	-	-	362	-	-	-	-	-	-	RF	-
Nickel Chloride	NiCl₂	1,001	S	3.55	-	-	-	444	-	-	-	-	-	-	RF	-
Nickel Oxide	NiO	1,984	-	6.67	**1.00	-	-	~1,470	-	-	-	-	-	Al₂O₃	RF-R	Dissociates on heating.
Nickel/Iron †	Ni/Fe	-	-	8.7	**1.00	-	-	-	-	FABMATE^®‡	-	-	-	-	-	-
Nimendium †	Ni₃%Mn	1,425	-	8.8	-	-	-	-	-	-	-	-	-	-	DC	-
Niobium	Nb	2,468	-	8.57	0.492	1,728	1,977	2,287	Excellent	FABMATE^®	-	-	-	-	DC	Click here for full Evaporation Process Notes on this material. Attacks W source.
Niobium (II) Oxide	NbO	-	-	7.3	-	-	-	1,100	-	-	-	-	-	-	RF	-
Niobium (III) Oxide	Nb₂O₃	1,780	-	7.5	-	-	-	-	-	-	W	-	W	-	RF, RF-R	-
Niobium (V) Oxide	Nb₂O₅	1,485	-	4.6	**1.00	-	-	-	-	-	W	-	W	-	RF, RF-R	-
Niobium Boride	NbB₂	2,900	-	6.97	-	-	-	-	-	-	-	-	-	-	RF	-
Niobium Carbide	NbC	3,500	-	7.6	**1.00	-	-	-	Fair	-	-	-	-	-	RF	-
Niobium Nitride	NbN	2,573	-	8.4	**1.00	-	-	-	-	-	-	-	-	-	RF, RF-R	Reactive. Evaporates Nb in 10^-3 Torr N₂.
Niobium Telluride	NbTe₂	-	-	7.6	-	-	-	-	-	-	-	-	-	-	RF	Composition variable.
Niobium-Tin	Nb₃Sn	-	-	-	-	-	-	-	Excellent	-	-	-	-	-	DC	Co-evaporate from 2 sources.
Osmium	Os	3,045	-	22.48	-	2,170	2,430	2,760	Fair	-	-	-	-	-	DC	-
Osmium Oxide	Os₂O₃	-	D	-	-	-	-	-	-	-	-	-	-	-	-	Deposits Os in 10^-3 Torr O₂.
Palladium	Pd	1,554	S	12.02	0.357	842	992	1,192	Excellent	FABMATE^®, Graphite, Tungsten	W***	W	W	Al₂O₃	DC	Click here for full Evaporation Process Notes on this material. Alloys with refractory metals.
Palladium Oxide	PdO	870	-	9.7	-	-	-	575	-	-	-	-	-	Al₂O₃	RF-R	Decomposes.
Parylene	C₈H₈	300–400	-	1.1	-	-	-	-	-	-	-	-	-	-	-	Vapor-depositable plastic.
Permalloy^® †	Ni/Fe/Mo/Mn	1,395	-	8.7	**1.00	947	1,047	1,307	Good	FABMATE^®‡	W	-	-	Al₂O₃	DC	Film low in Ni.
Phosphorus	P	44.1	-	1.82	-	327	361	402	-	-	-	-	-	Al₂O₃	-	Material reacts violently in air.
Phosphorus Nitride	P₃N₅	-	-	2.51	-	-	-	-	-	-	-	-	-	-	RF, RF-R	-
Platinum	Pt	1,772	-	21.45	0.245	1,292	1,492	1,747	Excellent	FABMATE^®, Graphite	W	W	W	C	DC	Click here for full Evaporation Process Notes on this material. Alloys with metals. Films soft, poor adhesion.
Platinum Oxide	PtO₂	450	-	10.2	-	-	-	-	-	-	-	-	-	-	RF-R	E-beam preferred for evaporation.
Plutonium	Pu	641	-	19.84	-	-	-	-	-	-	W	-	-	-	-	-
Polonium	Po	254	-	9.4	-	117	170	244	-	-	-	-	-	Q	-	-
Potassium	K	63	-	0.86	-	23	60	125	-	-	Mo	-	-	Q	-	Metal reacts rapidly in air. Preheat gently to outgas.
Potassium Bromide	KBr	734	-	2.75	-	-	-	~450	-	-	Ta, Mo	-	-	Q	RF	Preheat gently to outgas.
Potassium Chloride	KCl	770	S	1.98	-	-	-	510	Good	Tantalum	Ta, Ni	-	-	-	RF	Preheat gently to outgas.
Potassium Fluoride	KF	858	-	2.48	-	-	-	~500	-	-	-	-	-	Q	RF	Preheat gently to outgas.
Potassium Hydroxide	KOH	360	-	2.04	-	-	-	~400	-	-	-	-	-	-	-	Preheat gently to outgas.
Potassium Iodide	KI	681	-	3.13	-	-	-	~500	-	-	Ta	-	-	-	RF	Preheat gently to outgas.
Praseodymium	Pr	931	-	6.77	**1.00	800	950	1,150	Good	-	Ta	-	-	-	DC	-
Praseodymium Oxide	Pr₂O₃	-	D	7.07	-	-	-	1,400	Good	-	-	-	-	ThO₂	RF, RF-R	Loses oxygen.
PTFE	PTFE	330	-	2.9	-	-	-	-	-	-	W	-	-	-	RF	Baffled source. Film structure doubtful.
Radium	Ra	700	-	5.5	-	246	320	416	-	-	-	-	-	-	-	-
Rhenium	Re	3,180	-	21.02	0.15	1,928	2,207	2,571	Poor	-	-	-	-	-	DC	-
Rhenium Oxide	ReO₃	-	D	7	-	-	-	-	-	-	-	-	-	-	RF	Evaporate Re in 10^-3 Torr O₂.
Rhodium	Rh	1,966	-	12.41	0.21	1,277	1,472	1,707	Good	FABMATE^®, Tungsten	W	W	W	ThO₂,VitC	DC	E-beam gun preferred.
Rubidium	Rb	39	-	1.48	-	-3	37	111	-	-	-	-	-	Q	-	-
Rubidium Chloride	RbCl	718	-	2.09	-	-	-	~550	-	-	-	-	-	Q	RF	-
Rubidium Iodide	RbI	647	-	3.55	-	-	-	~400	-	-	-	-	-	Q	RF	-
Ruthenium	Ru	2,310	-	12.3	0.182	1,780	1,990	2,260	Poor	-	-	-	-	-	DC	Click here for full Evaporation Process Notes on this material. -
Samarium	Sm	1,074	-	7.52	0.89	373	460	573	Good	-	Ta	-	-	Al₂O₃	DC	-
Samarium Oxide	Sm₂O₃	2,350	-	8.35	-	-	-	-	Good	-	-	-	-	ThO₂	RF, RF-R	Loses oxygen. Films smooth, clear.
Samarium Sulfide	Sm₂S₃	1,900	-	5.73	-	-	-	-	Good	-	-	-	-	-	-	-
Scandium	Sc	1,541	-	2.99	0.91	714	837	1,002	Excellent	Tungsten, Molybdenum	W	-	-	Al₂O₃	RF	Alloys with Ta.
Scandium Oxide	Sc₂O₃	2,300	-	3.86	-	-	-	~400	Fair	-	-	-	-	-	RF, RF-R	-
Selenium	Se	217	-	4.81	0.864	89	125	170	Good	FABMATE^®, Tungsten, Molybdenum	W, Mo	W, Mo	W, Mo	Al₂O₃	-	Bad for vacuum systems. High V.P. Low Melting Point materials not ideal for sputtering.
Silicon	Si	1,410	-	2.32	0.712	992	1,147	1,337	Fair	FABMATE^®‡, Tantalum	-	-	-	-	RF	Alloys with W; use heavy W boat. SiO produced.
Silicon (II) Oxide	SiO	>1,702	S	2.13	0.87	-	-	850	Fair	FABMATE^®, Tungsten, Tantalum	Ta	W	W	Ta	RF, RF-R	For resistance evaporation, use baffle box and low rate.
Silicon (IV) Oxide	SiO₂	1,610	-	2.65	**1.00	*	*	1,025*	Excellent	FABMATE^®, Graphite, Tantalum	-	-	-	Al₂O₃	RF	Click here for full Evaporation Process Notes on this material. Quartz excellent in E-beam.
Silicon (N-type)	Si (N-type)	1,410	-	2.32	0.712	992	1,147	1,337	Fair	FABMATE^®‡, Tantalum	-	-	-	-	DC, RF	-
Silicon (P-type)	Si (P-type)	1,410	-	2.32	0.712	992	1,147	1,337	Fair	FABMATE^®‡, Tantalum	-	-	-	-	DC, RF	Click here for full Evaporation Process Notes on this material. -
Silicon Boride	SiB₆	-	-	-	-	-	-	-	Poor	-	-	-	-	-	RF	-
Silicon Carbide	SiC	~2,700	S, D	3.22	**1.00	-	-	1,000	-	-	-	-	-	-	RF	Sputtering preferred.
Silicon Nitride	Si₃N₄	1,900	-	3.44	**1.00	-	-	~800	-	-	-	-	-	-	RF, RF-R	-
Silicon Selenide	SiSe	-	-	-	-	-	-	550	-	-	-	-	-	Q	RF	-
Silicon Sulfide	SiS	940	S	1.85	-	-	-	450	-	-	-	-	-	Q	RF	-
Silicon Telluride	SiTe₂	-	-	4.39	-	-	-	550	-	-	-	-	-	Q	RF	-
Silver	Ag	962	-	10.5	0.529	847	958	1,105	Excellent	FABMATE^®, Tungsten, Molybdenum, Tantalum	W	Mo	Ta, Mo	Al₂O₃,W	DC	Click here for full Evaporation Process Notes on this material. -
Silver Bromide	AgBr	432	D	6.47	-	-	-	~380	-	-	Ta	-	-	Q	RF	-
Silver Chloride	AgCl	455	-	5.56	-	-	-	~520	-	-	Mo	-	Mo	Q	RF	-
Silver Iodide	AgI	558	-	6.01	-	-	-	~500	-	-	Ta	-	-	-	RF	-
Sodium	Na	98	-	0.97	-	74	124	192	-	-	Ta	-	-	Q	-	Preheat gently to outgas. Metal reacts quickly in air.
Sodium Bromide	NaBr	747	-	3.2	-	-	-	~400	-	-	-	-	-	Q	RF	Preheat gently to outgas.
Sodium Chloride	NaCl	801	-	2.17	-	-	-	530	Good	-	Ta, W, Mo	-	-	Q	RF	Copper oven; little decomposition. Preheat gently to outgas.
Sodium Cyanide	NaCN	564	-	-	-	-	-	~550	-	-	-	-	-	-	RF	Preheat gently to outgas.
Sodium Fluoride	NaF	993	-	2.56	-	-	-	~1,000	Good	Tungsten, FABMATE^®	Mo, Ta, W	-	-	BeO	RF	Preheat gently to outgas. No decomposition.
Sodium Hydroxide	NaOH	318	-	2.13	-	-	-	~470	-	-	-	-	-	-	-	Preheat gently to outgas.
Spinel	MgAI₂O₄	-	-	8	-	-	-	-	Good	-	-	-	-	-	RF	-
Strontium	Sr	769	-	2.6	**1.00	239	309	403	Poor	-	W, Ta, Mo	W	W	VitC	RF	Wets but does not alloy with W/Ta/Mo. May react in air.
Strontium Chloride	SrCl₂	875	-	3.05	-	-	-	-	-	-	-	-	-	-	-	-
Strontium Fluoride	SrF₂	1,473	-	4.24	-	-	-	~1,000	-	-	-	-	-	Al₂O₃	RF	-
Strontium Oxide	SrO	2,430	S	4.7	-	-	-	1,500	-	-	Mo	-	-	Al₂O₃	RF	Reacts with W/Mo.
Strontium Sulfide	SrS	>2,000	-	3.7	-	-	-	-	-	-	Mo	-	-	-	RF	Decomposes.
Strontium Titanate	SrTiO₃	-	-	4.81	0.31	-	-	-	-	-	-	-	-	-	-	-
Sulfur	S	113	-	2.07	-	13	19	57	Poor	-	W	-	W	Q	-	Bad for vacuum systems. Not recommended for sputtering.
Supermalloy^® †	Ni/Fe/Mo	1,410	-	8.9	-	-	-	-	Good	FABMATE^®‡	-	-	-	-	DC	Sputtering preferred; or co-evaporate from 2 sources-Ni/Fe and Mo.
Tantalum	Ta	3,017	-	16.6	0.262	1,960	2,240	2,590	Excellent	FABMATE^®, Graphite	-	-	-	-	DC	Click here for full Evaporation Process Notes on this material. Forms good films.
Tantalum Boride	TaB₂	3,000(?)	-	11.15	-	-	-	-	-	-	-	-	-	-	RF	-
Tantalum Carbide	TaC	3,880	-	13.9	**1.00	-	-	~2,500	-	-	-	-	-	-	RF	-
Tantalum Nitride	TaN	3,360	-	16.3	**1.00	-	-	-	-	-	-	-	-	-	RF, RF-R	Evaporate Ta in 10^-3 Torr N₂.
Tantalum Pentoxide	Ta₂O₅	1,872	-	8.2	0.3	1,550	1,780	1,920	Good	FABMATE^®, Tantalum	Ta	W	W	VitC	RF, RF-R	Click here for full Evaporation Process Notes on this material. Slight decomposition. Evaporate Ta in 10^-3 Torr O₂.
Tantalum Sulfide	TaS₂	>1,300	-	-	-	-	-	-	-	-	-	-	-	-	RF	-
Technetium	Tc	2,200	-	11.5	-	1,570	1,800	2,090	-	-	-	-	-	-	-	-
Tellurium	Te	449	-	6.25	0.9	157	207	277	Poor	FABMATE^®	W, Ta	W	W, Ta	Al₂O₃, Q	RF	Wets without alloying. Not recommended for sputtering.
Terbium	Tb	1,356	-	8.27	0.66	800	950	1,150	Excellent	Graphite, FABMATE^®, Tantalum	Ta	-	-	Al₂O₃	RF	-
Terbium Fluoride	TbF₃	1,172	-	-	-	-	-	~800	-	-	-	-	-	-	RF	-
Terbium Oxide	Tb₂O₃	2,387	-	7.87	-	-	-	1,300	-	-	-	-	-	-	RF	Partially decomposes.
Terbium Peroxide	Tb₄O₇	-	D	-	-	-	-	-	-	-	Ta	-	-	-	RF	Films TbO.
Thallium	Tl	304	-	11.85	-	280	360	470	Poor	FABMATE^®	W, Ta	-	W	Al₂O₃, Q	DC	Wets freely. Not recommended for sputtering.
Thallium Bromide	TlBr	480	S	7.56	-	-	-	~250	-	-	Ta	-	-	Q	RF	-
Thallium Chloride	TlCl	430	S	7	-	-	-	~150	-	-	Ta	-	-	Q	RF	-
Thallium Iodide	TlI	440	S	7.1	-	-	-	~250	-	-	-	-	-	Q	RF	-
Thallium Oxide	Tl₂O₂	717	-	10.19	-	-	-	350	-	-	-	-	-	-	RF	Disproportionates at 850°C to Tl₂O.
Thorium	Th	1,750	-	11.7	-	1,430	1,660	1,925	Excellent	Molybdenum, Tantalum, Tungsten	W, Ta, Mo	W	W	-	-	-
Thorium Bromide	ThBr₄	610	S	5.67	-	-	-	-	-	-	Mo	-	-	-	-	-
Thorium Carbide	ThC₂	2,655	-	8.96	-	-	-	~2,300	-	-	-	-	-	C	RF	-
Thorium Fluoride	ThF₄	>900	-	6.32	-	-	-	~750	Fair	-	Mo	-	W	VitC	RF	-
Thorium Oxide	ThO₂	3,220	-	9.86	-	-	-	~2,100	Good	Tungsten	-	-	-	-	RF, RF-R	-
Thorium Oxyfluoride	ThOF₂	900	-	9.1	-	-	-	-	-	-	Mo, Ta	-	-	-	-	-
Thorium Sulfide	ThS₂	1,925	-	7.3	-	-	-	-	-	-	-	-	-	-	RF	Sputtering preferred; or co-evaporate from 2 sources.
Thulium	Tm	1,545	S	9.32	-	461	554	680	Good	-	Ta	-	-	Al₂O₃	DC	-
Thulium Oxide	Tm₂O₃	-	-	8.9	-	-	-	1,500	-	-	-	-	-	-	RF	Decomposes.
Tin	Sn	232	-	7.28	0.724	682	807	997	Excellent	FABMATE^®, Tantalum	Mo	W	W	Al₂O₃	DC	Wets Mo low sputter power. Use Ta liner in E-beam guns. Low Melting Point materials not ideal for sputtering.
Tin Oxide	SnO₂	1,630	S	6.95	**1.00	-	-	~1,000	Excellent	-	W	W	W	Q, Al₂O₃	RF, RF-R	Films from W are oxygen deficient; oxidize in air.
Tin Selenide	SnSe	861	-	6.18	-	-	-	~400	Good	-	-	-	-	Q	RF	-
Tin Sulfide	SnS	882	-	5.22	-	-	-	~450	-	-	-	-	-	Q	RF	-
Tin Telluride	SnTe	780	D	6.48	-	-	-	~450	-	-	-	-	-	Q	RF	-
Titanium	Ti	1,660	-	4.5	0.628	1,067	1,235	1,453	Excellent	FABMATE^®,Intermetallic	W	-	-	TiC, TiB₂-BN	DC	Click here for full Evaporation Process Notes on this material. Alloys with W/Ta/Mo; evolves gas on first heating.
Titanium (II) Oxide	TiO	1,750	-	4.95	**1.00	-	-	~1,500	Good	FABMATE^®, Tantalum	W, Mo	-	-	VitC	RF	Preheat gently to outgas.
Titanium (III) Oxide	Ti₂O₃	2,130	D	4.6	-	-	-	-	Good	FABMATE^®, Tantalum	W	-	-	-	RF	Decomposes.
Titanium (IV) Oxide	TiO₂	1,830	-	4.23	0.4	-	-	~1,300	Fair	FABMATE^®, Tantalum	W, Mo	-	W	-	RF, RF-R	Click here for full Evaporation Process Notes on this material. Suboxide, must be reoxidized to rutile. Ta reduces TiO₂ to TiO and Ti.
Titanium Boride	TiB₂	2,900	-	4.5	**1.00	-	-	-	Poor	-	-	-	-	-	RF	-
Titanium Carbide	TiC	3,140	-	4.93	**1.00	-	-	~2,300	-	-	-	-	-	-	RF	-
Titanium Nitride	TiN	2,930	-	5.4	**1.00	-	-	-	Good	Molybdenum	Mo	-	-	-	RF, RF-R	Sputtering preferred. Decomposes with thermal evaporation.
Tungsten	W	3,410	-	19.25	0.163	2,117	2,407	2,757	Good	Direct in Hearth FABMATE®	-	-	-	-	DC	Click here for full Evaporation Process Notes on this material. Forms volatile oxides. Films hard and adherent.
Tungsten Boride	WB₂	~2,900	-	10.77	-	-	-	-	Poor	-	-	-	-	-	RF	-
Tungsten Carbide	WC	2,860	-	15.63	0.151	1,480	1,720	2,120	Excellent	Graphite, FABMATE^®	C	-	-	-	RF	-
Tungsten Disulfide	WS₂	1,250	D	7.5	**1.00	-	-	-	-	-	-	-	-	-	RF	-
Tungsten Oxide	WO₃	1,473	S	7.16	**1.00	-	-	980	Good	Tungsten	W	-	-	-	RF-R	Preheat gently to outgas. W reduces oxide slightly.
Tungsten Selenide	WSe₂	-	-	9	-	-	-	-	-	-	-	-	-	-	RF	-
Tungsten Silicide	WSi₂	>900	-	9.4	**1.00	-	-	-	-	-	-	-	-	-	RF	-
Tungsten Telluride	WTe₂	-	-	9.49	-	-	-	-	-	-	-	-	-	Q	RF	-
Uranium	U	1,132	-	19.05	-	1,132	1,327	1,582	Good	-	Mo, W	W	W	-	-	Films oxidize.
Uranium (II) Sulfide	US	>2,000	-	10.87	-	-	-	-	-	-	-	-	-	-	-	-
Uranium (III) Oxide	U₂O₃	1,300	D	8.3	-	-	-	-	-	-	W	-	W	-	RF-R	Disproportionates at 1,300°C to UO₂.
Uranium (IV) Oxide	UO₂	2,878	-	10.96	-	-	-	-	-	-	W	-	W	-	RF	Ta causes decomposition.
Uranium (IV) Sulfide	US₂	>1,100	-	7.96	-	-	-	-	-	-	W	-	-	-	RF	Slight decomposition.
Uranium Carbide	UC₂	2,350	-	11.28	-	-	-	2,100	-	-	-	-	-	C	RF	Decomposes.
Uranium Fluoride	UF₄	960	-	6.7	-	-	-	300	-	-	Ni	-	-	-	RF	-
Uranium Phosphide	UP₂	-	-	8.57	-	-	-	1,200	-	-	Ta	-	-	-	RF	Decomposes.
Vanadium	V	1,890	-	6.11	0.53	1,162	1,332	1,547	Excellent	Tungsten	W, Mo	-	-	-	DC	Wets Mo. E-beam-evaporated films preferred.
Vanadium (IV) Oxide	VO₂	1,967	S	4.34	-	-	-	~575	-	-	-	-	-	-	RF, RF-R	Sputtering preferred.
Vanadium (V) Oxide	V₂O₅	690	D	3.36	**1.00	-	-	~500	-	-	-	-	-	Q	RF	-
Vanadium Boride	VB₂	2,400	-	5.1	-	-	-	-	-	-	-	-	-	-	RF	-
Vanadium Carbide	VC	2,810	-	5.77	**1.00	-	-	~1,800	-	-	-	-	-	-	RF	-
Vanadium Nitride	VN	2,320	-	6.13	-	-	-	-	-	-	-	-	-	-	RF, RF-R	-
Vanadium Silicide	VSi₂	1,700	-	4.42	-	-	-	-	-	-	-	-	-	-	RF	-
Ytterbium	Yb	819	S	6.98	1.13	520	590	690	Good	Tantalum	Ta	-	-	-	-	-
Ytterbium Fluoride	YbF₃	1,157	-	8.2	-	-	-	~800	-	Tantalum, Molybdenum	Mo	-	-	-	RF	Click here for full Evaporation Process Notes on this material. -
Ytterbium Oxide	Yb₂O₃	2,346	S	9.17	**1.00	-	-	~1,500	-	-	-	-	-	-	RF, RF-R	Loses oxygen.
Yttrium	Y	1,522	-	4.47	0.835	830	973	1,157	Excellent	Tungsten	W, Ta	W	W	Al₂O₃	RF, DC	High Ta solubility.
Yttrium Aluminum Oxide	Y₃Al₅O₁₂	1,990	-	-	-	-	-	-	Good	-	-	W	W	-	RF	Films not ferroelectric.
Yttrium Fluoride	YF₃	1,387	-	4.01	-	-	-	-	-	Tantalum, Molybdenum	-	-	-	-	RF	Click here for full Evaporation Process Notes on this material. -
Yttrium Oxide	Y₂O₃	2,410	-	5.01	**1.00	-	-	~2,000	Good	FABMATE^®, Graphite, Tungsten	W	-	-	C	RF, RF-R	Click here for full Evaporation Process Notes on this material. Loses oxygen; films smooth and clear.
Zinc	Zn	420	-	7.14	0.514	127	177	250	Excellent	FABMATE^®, Graphite, Tungsten	Mo, W, Ta	W	W	Al₂O₃, Q	DC	Evaporates well under wide range of conditions.
Zinc Antimonide	Zn₃Sb₂	570	-	6.33	-	-	-	-	-	-	-	-	-	-	RF	-
Zinc Bromide	ZnBr₂	394	-	4.2	-	-	-	~300	-	-	W	-	-	C	RF	Decomposes.
Zinc Fluoride	ZnF₂	872	-	4.95	-	-	-	~800	-	-	Ta	-	-	Q	RF	-
Zinc Nitride	Zn₃N₂	-	-	6.22	-	-	-	-	-	-	Mo	-	-	-	RF	Decomposes.
Zinc Oxide	ZnO	1,975	-	5.61	0.556	-	-	~1,800	Fair	-	-	-	-	-	RF-R	-
Zinc Selenide	ZnSe	>1,100	-	5.42	0.722	-	-	660	-	Tantalum, Molybdenum	Ta, W, Mo	W, Mo	W, Mo	Q	RF	Click here for full Evaporation Process Notes on this material. Preheat gently to outgas. Evaporates well.
Zinc Sulfide	ZnS	1,700	S	3.98	0.775	-	-	~800	Good	Tantalum, Molybdenum	Ta, Mo	-	-	-	RF	Click here for full Evaporation Process Notes on this material. Preheat gently to outgas. Films partially decompose. n=2.356.
Zinc Telluride	ZnTe	1,239	-	6.34	0.77	-	-	~600	-	-	Mo, Ta	-	-	-	RF	Preheat gently to outgas.
Zirconium	Zr	1,852	-	6.49	0.6	1,477	1,702	1,987	Excellent	-	W	-	-	-	DC	Click here for full Evaporation Process Notes on this material. Alloys with W. Films oxidize readily.
Zirconium Boride	ZrB₂	~3,200	-	6.09	-	-	-	-	Good	-	-	-	-	-	RF	-
Zirconium Carbide	ZrC	3,540	-	6.73	0.264	-	-	~2,500	-	-	-	-	-	-	RF	-
Zirconium Nitride	ZrN	2,980	-	7.09	**1.00	-	-	-	-	-	-	-	-	-	RF, RF-R	Reactively evaporate in 10^-3 Torr N₂.
Zirconium Oxide	ZrO₂	~2,700	-	5.89	**1.00	-	-	~2,200	Good	Graphite, Tungsten	W	-	-	-	RF, RF-R	Click here for full Evaporation Process Notes on this material. Films oxygen deficient, clear and hard.
Zirconium Silicate	ZrSiO₄	2,550	-	4.56	-	-	-	-	-	-	-	-	-	-	RF	-
Zirconium Silicide	ZrSi₂	1,700	-	4.88	-	-	-	-	-	-	-	-	-	-	RF	-