EC-I Series – In-line Deposition Stages

Typical EC-I Deposition Stage shown. This unit includes sample cradle lift/lower and constant sample cradle rotation and biasing. Substrate transfer is shown via transfer arm and sample cradle lift ability. Heater element and Dark Space grid also shown during constant sample rotation.

EC-I diagram

Substrate shutter option

EC-I with manual adjustable deposition height option

Overview

• Substrate heating to 1200°C
• Continuous substrate rotation up to 60rpm
• Substrate lift/lower for transfer
• DC/RF substrate biasing
• Homing for automatic transfer alignment
• Adjustable deposition height
• SEMI standard 2" to 200mm diameter substrate handling
• SiCg or sSiC heater technology
• True UHV performance

The EC-I series is the latest model in the very successful range of EpiCentre stages, providing state-of-the-art performance for various growth and deposition techniques including MBE, sputtering and CVD. It represents the latest advance in modular 'in-line' deposition instruments which offer continuous substrate heating, rotation, biasing, and facilities for substrate transfer, while maintaining true UHV compatibility.

The series includes models to accommodate SEMI standard wafers from 2" to 200mm diameter, and special substrate cradles can be provided to accommodate specific substrate shapes and designs up to 200mm (8.5") diameter.

The EC-I series benefits from the success of UHV Design's unique hollow magnetic coupling technology using the CF38 mounted MagiLift drive. This single compact device provides magnetically coupled rotation and axial motion. The hollow drive technology facilitates the passing of services through the drive to a stationary wafer heating module in close proximity to the substrate, eliminating the need for vulnerable high current rotational connections. The MagiLift provides continuous rotation of the substrate cradle for better temperature and layer uniformity, plus a pneumatically actuated 25mm lift/lower for substrate transfer. An external magnetic proximity home switch is also provided for position sensing the internal rotor to align the stage to within 0.1° for automated substrate transfer.

The stationary heater module employs multiple refractory metal Molybdenum heat shields to minimize heat loss, (Inconel and other materials available up on request), and a choice of either SiCg (SiC coated graphite) or sSiC (ß phase solid SiC) heater elements, both of which are capable of heating wafers to 1200°C and operating within O₂ rich environments.

The electrically isolated substrate cradle can be biased with either DC or RF to facilitate sputter cleaning prior to deposition or for better control of deposition kinetics. 'Faraday Dark Space Shielding' is supplied as standard on all stages. This confines plasma to the substrate cradle region. Our propriety substrate biasing technology provides unrivalled flicker-free performance, typically with zero maintenance and long operational life. The deposition height adjustment option allows the Z position of the substrate to be adjusted to optimize the distance from the deposition flux. Deposition shields can also be provided to protect the heater module.

The stages can be mounted in any orientation, although they are most commonly mounted vertically with the wafer facing up or down and parallel to the mounting flange. Other orientations can be accommodated with special wafer holders. Options are also available to configure EpiCentres for higher pressure and corrosive environments.

The series has a full suite of options including choice of system mounting flanges, manual or pneumatic substrate shutters and thermocouple materials.

Stage Configuration: EC-I Series

KEY: ✓ = Substrate size can be accommodated on specified system flange
✓(s) = Substrate shutter option is available on specified system flange
x = Not available

Cooled EC-I Series (CEC-I)

The Cooled EC-I series (CEC-I) provides state-of-the-art performance for various growth and deposition techniques including MBE, sputtering and CVD.

CEC-I offers continuous substrate rotation, high temperature and high uniformity heating with the ability to statically cool a substrate using a novel sample holder design to provide uniform cooling. CEC-I also offers 1kV DC & 100W RF biasing with facilities for substrate transfer, while maintaining true UHV compatibility.

CEC-I is designed to accept SEMI standard 6" wafers.

Key Features

• Substrate heating to 800°C
• Continuous substrate rotation during heating
• Cooling of static substrate to -100°C
• Homing for automatic transfer alignment
• 1kV DC & 100W RF substrate biasing
• SEMI standard 6" Ø substrates

Sample Transfer

To facilitate sample transfer the stage head is retracted as shown on the main image. This allows the substrate holder to be placed on the holder manually with the chamber at atmosphere or by using a transfer arm under vacuum.

Stage head retracted for sample transfer

Heating Mode

In heating mode, the substrate can be rotated at 20rpm whilst heating to 800°C. 1kV DC, 100W RF bias can be applied in this mode.

Cooling Mode

Novel dynamic sample holder provides uniform cooling of the static substrate using cooled water for rapid wafer quench or LN2 for cryogenic wafer cooling to -100°C. Please note that the substrate cannot be rotated during cooling.

Rapid Wafer Quench

Cryogenic Wafer Cooling